| PART |
Description |
Maker |
| CM400HA-28H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
HIGH POWER SWITCHING USE INSULATED TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| CM600DY-34H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
| CM800HB-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
| CM800E2Z-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
| CM400DY-50H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
| IRG4PC40FPBF IRG4PC40FPBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR
INSULATED GATE BIPOLARTRANSISTOR Fast Speed IGBT
|
International Rectifier
|
| AP20GT60I AP20GT60I14 |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
High Speed Switching
|
Advanced Power Electronics Corp.
|
| IRGP420U GP420U |
Insulated Gate Bipolar Transistors (IGBTs)(瓒?揩???缂?????????朵?绠?
500V Discrete IGBT in a TO-3P (TO-247AC) package
Insulated Gate Bipolar Transistors (IGBTs)(超快速绝缘栅型双极型晶体 绝缘门双极晶体管（IGBTs）（超快速绝缘栅型双极型晶体管）
|
International Rectifier, Corp.
|
| NTE3303 NTE3302 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch
|
NTE[NTE Electronics]
|
| NTE3312 NTE3311 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch
|
NTE[NTE Electronics]
|
| NTE3323 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch
|
NTE[NTE Electronics]
|
